Omnipolar Hall Switch

HS260 Fully Low Sensitivity Hall Switch

The HS260 is an omnipolar Hall-effect sensor based on mixed-signal CMOS technology. This IC uses advanced chopper stabilization techniques to provide accurate and stable magnetic switch points.
In terms of circuit design, HS260 provides an embedded controlled clock mechanism to provide a clock source for the Hall device and analog signal processing circuit. At the same time, this controlled clock mechanism can send a control signal to make the circuit with highcurrent consumption enter the "sleep" mode periodically; through this mechanism, the chip is periodically "woken up" and detects the strength of the magnetic field passing through the Hall device according to the predetermined magnetic field strength threshold. If the magnetic flux density is higher than the "operating point" threshold or lower than the "release point" threshold, the open-drain output transistor is driven and latched into the corresponding state. In the "sleep" cycle, the output transistor is locked in its previous state. In battery-powered applications, this design provides the best support for extending the working life.
The output transistors of the HS260 are locked in the on (BOP) state when there is a strong north or south magnetic field on the side facing the package marking, and locked in the off (BRP) state when there is no magnetic field.


  • Product Detail
The HS260 is an omnipolar Hall-effect sensor based on mixed-signal CMOS technology. This IC uses advanced chopper stabilization techniques to provide accurate and stable magnetic switch points.
In terms of circuit design, HS260 provides an embedded controlled clock mechanism to provide a clock source for the Hall device and analog signal processing circuit. At the same time, this controlled clock mechanism can send a control signal to make the circuit with highcurrent consumption enter the "sleep" mode periodically; through this mechanism, the chip is periodically "woken up" and detects the strength of the magnetic field passing through the Hall device according to the predetermined magnetic field strength threshold. If the magnetic flux density is higher than the "operating point" threshold or lower than the "release point" threshold, the open-drain output transistor is driven and latched into the corresponding state. In the "sleep" cycle, the output transistor is locked in its previous state. In battery-powered applications, this design provides the best support for extending the working life.
The output transistors of the HS260 are locked in the on (BOP) state when there is a strong north or south magnetic field on the side facing the package marking, and locked in the off (BRP) state when there is no magnetic field.


Product features

Micropower battery powered applications
Omnipolar output switch
Operating voltage as low as 2.0V
High sensitivity direct reed switch replacement applications
CMOS output


Main applications

Solid-state switch
Reminder switch for cordless cell phones
Screen saver switch for flip phones
Magnetic sensor switch for low duty cycle
replacement of reed tubes


Product parameters



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